Full Form of EEPROM:
Electrically Erasable Programmable Read Only Memory
EEPROM Full Form is Electrically Erasable Programmable Read Only Memory. The EEPROM is a kind of a memory of non-volatile nature. Numerous electronic devices like computers use EEPROM for storing data in small amounts. The organization of this memory is in the form of some arrays of the floating gate transistors. Its programming can be done by using certain programming signals. They can also be erased inside the memory’s circuit itself by using the same method. The EEPROMs that were made in the early years of their development were capable of performing the operations of only 1 byte. On the other hand, multi-byte operations can be performed quickly by the modern ones.
In an EEPROM, individual bytes can be re-written, erased and read. This makes it different from other non-volatile memories. Its data can be deleted by using the ultra-violet light. The EEPROM was invented by Eli Harari in the year 1977. Its modern form is usually referred to as the Flash memory. The term EEPROM, in the electronics industry, is reserved for memories that can be erased byte-wise. The Flash memories, on the other hand, can be erased block-wise. The die area occupied by the EEPROM is larger as compared to that of the flash memory of the same capacity.
In the case of former, each cell requires an erase, a write and a read transistor, while in the latter; large cell blocks usually share the circuits. The EEPROMs are slowly being replaced by other technologies of non-volatile memory like MRAM and FeRAM. Although this is true for certain applications, a small portion of market dedicated to the EEPROM will still remain in the near future.