Full Form of DRAM:
Dynamic Random-Access Memory
DRAM Full Form is Dynamic Random-Access Memory. DRAM used to stores data bit by bit in a distinct capacitor within an integrated circuit. The capacitor may be in two states: charged or discharged that represents binary value 1 and 0. DRAM requires refreshing every few milliseconds between the cycles hence it offers greater access time. DRAM has a volatile memory i.e. the information fades if the capacitor is not refreshed. It loses data as soon as one removes the power connection.
DRAM is used in digital electronics where low cost and high capacity memory is required. The largest application of DRAM is in a computer called RAM. It is also used in workstations and servers. DRAM is widely used when cost is a greater concern than speed as oppose to SRAM. DRAM has structural simplicity as it requires a transistor and a capacitor. DRAM requires greater power consumption. DRAM is arranged in a square collection of storage cells charged with one capacitor and one transistor.
The capacitor and transistors are relatively smaller in size. There is millions of capacitor and transistors in a single memory chip.When a cell is in the “read” state, an entire row is read out. When in a “write” state, a whole row is “read”, one value is changed, and the row is rewritten. There are DRAM chips that contain a counter while many systems rely on peripheral refresh logic. The access time of DRAM is 60 nanoseconds. The cycle time of DRAM is longer than that of SRAM, as it needs to stop between refresh and access.